A novel self-aligned bottom gate poly-Si TFT with in-situ LDD

@article{Zhan2001ANS,
  title={A novel self-aligned bottom gate poly-Si TFT with in-situ LDD},
  author={Shengdong Zhan and Ruqi Han and M K Chan},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={393-395}
}
A lithography independent self-aligned bottom gate thin film transistor (SABG-TFT) technology is proposed and experimentally demonstrated. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation steps. Thus, the number of masks used in the technology is the same as that in a conventional top gate TFT technology. Moreover, devices formed by the proposed method have… CONTINUE READING

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