A novel positive-feedback read scheme with tail current source of STT-MRAM

@article{Yan2017ANP,
  title={A novel positive-feedback read scheme with tail current source of STT-MRAM},
  author={Jin Yan and Dongsheng Liu and Xuecheng Zou and Bangdi Xu},
  journal={2017 IEEE 12th International Conference on ASIC (ASICON)},
  year={2017},
  pages={702-705}
}
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has gained great popularity in both academia and industry. As an emerging memory, it is regarded as a common memory that may replace SRAM and DRAM in computer system and other applications. However, there are still some challenges such as read reliability and read disturbance impeding mass production of STT-MRAM. This paper proposes a low-power-consumption read scheme with high read reliability. Due to the very low read current, this… CONTINUE READING

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