A novel non-linear GaAs fet model for intermodulation analysis in general purpose harmonic-balance simulators

Abstract

The ability of most widely used non-linear MESFET models to predict detailed device's characteristics, as S parameter bias dependence and intermodulation (IMD) is reviewed. Their almost general lack of capacity to reproduce the higher order derivatives of the I(v) and Q(v) curves, makes them completely useless to simulate small signal harmonic or IMD… (More)

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Cite this paper

@article{Pedro1993ANN, title={A novel non-linear GaAs fet model for intermodulation analysis in general purpose harmonic-balance simulators}, author={Jos{\'e} Carlos Pedro and Jorge P{\'e}rez}, journal={1993 23rd European Microwave Conference}, year={1993}, pages={714-716} }