A novel method based on capacitance-voltage for negative bias temperatures instability studies: Concept and results


In this paper, a novel method in MOS capacitors is suggested for negative bias temperature instability (NBTI) measurement. This method is based on C-V technique and allows to independently extracting the interface (ΔN<sub>it</sub>) and oxide traps (ΔN<sub>ot</sub>). The method permits a broad investigation in the reliability study by exploiting capacitance… (More)

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