A novel metamorphic high electron mobility transistors with (InxGa1-xAs)m/(InAs)n superlattice channel layer for millimeter-wave applications


High performance MHEMTs using (In<inf>x</inf>Ga<inf>1-x</inf>As)<inf>m</inf>/(InAs)<inf>n</inf> superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In… (More)

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