A novel high-voltage interconnection structure with dual trenches for 500V SOI-LIGBT

@article{Zhang2016ANH,
  title={A novel high-voltage interconnection structure with dual trenches for 500V SOI-LIGBT},
  author={Long Zhang and Jing Zhu and Weifeng Sun and Meng Chen and Chao Huang and Feng Zhou and Yan Gu and Yonghong Fu and Wei Chung Su},
  journal={2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
  year={2016},
  pages={439-442}
}
A novel high-voltage interconnection (HVI) structure with dual trenches for 500V SOI-LIGBT is proposed in this paper. Compared with the conventional dual trenches structure, the proposed structure features a shallow trench (T1) and a deep trench (T2) beneath the HVI. By employing the shallow trench (T1), the potential can easily penetrate into the deep… CONTINUE READING