A novel high voltage Pch-MOS with a new drain drift structure for 1200V HVICs

@article{Yoshino2013ANH,
  title={A novel high voltage Pch-MOS with a new drain drift structure for 1200V HVICs},
  author={Michitaka Yoshino and Katsuhiro Shimizu},
  journal={2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2013},
  pages={77-80}
}
A new 1200V Pch-MOS having a new drain structure is proposed. Our proposing new 1200V Pch-MOS improves a substrate leak problem which occurred in conventional one without sacrificing a breakdown voltage and an output current. Thanks to the new Pch-MOS, a 1200V HVIC which provides a high voltage level-shifting from high voltage region to low voltage region is successfully realized. 
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