A novel high-speed silicon MSM photodetector operating at 830 nm wavelength

@article{Lee1995ANH,
  title={A novel high-speed silicon MSM photodetector operating at 830 nm wavelength},
  author={H. C. Lee and Bart Van Zeghbroeck},
  journal={IEEE Electron Device Letters},
  year={1995},
  volume={16},
  pages={175-177}
}
A novel high-speed silicon photodetector that operates at a wavelength of 830 nm is reported. It consists of a Metal-Semiconductor-Metal (MSM) detector that is fabricated on a 5-/spl mu/m thick silicon membrane. The detector has a measured -3 dB bandwidth of 3 GHz at 10 V, which is almost one order of magnitude larger than the reported bandwidth of conventional silicon MSM detectors as measured at 830 nm. The DC responsivity is 0.17 A/W, corresponding to an internal quantum efficiency of 60.5… CONTINUE READING
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