A novel high performance enhanced-planar IGBT with P-type buried layer

Abstract

A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The p-type buried layer (PBL) is placed outside the n-type carrier stored (N-CS) layer and encompasses it partially. Compatible with the conventional EPIGBT technology, the PBL of the proposed structure can be formed by ion implantation and… (More)

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