A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter

@article{Zushi2012ANG,
  title={A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter},
  author={Y. Zushi and Shusuke Sato and Kei Matsui and Yuji Murakami and Sayaka Tanimoto},
  journal={2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2012},
  pages={1734-1739}
}
A novel gate drive circuit for an SiC-JFET in a bridge circuit that ensures a quick and stable switching has been proposed and demonstrated. The gate voltage of an off-state transistor tends to rise up due to a steep drain-source voltage change caused by turning-on of the transistor in the other side of the bridge circuit. Even though the gate terminal is kept in the off-state by a voltage source, the abovementioned steep voltage change induces a non-off-state voltage across the parasitic… CONTINUE READING
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