A novel differential 9t cell sram with reduced sub threshold leakage power

@article{Dhindsa2014AND,
  title={A novel differential 9t cell sram with reduced sub threshold leakage power},
  author={Amandeep Singh Dhindsa and Suman Saini},
  journal={2014 International Conference on Advances in Engineering & Technology Research (ICAETR - 2014)},
  year={2014},
  pages={1-5}
}
As the CMOS technology is being scaled down continuously, power dissipation is the major constraint for VLSI designers. In this paper we propose a differential 9T cell SRAM which employs differential read operation of cell as compared to conventional 8T cell SRAM without compromising with performance and stability. Moreover the proposed 9T SRAM uses a gated ground sleep transistor (nmos transistor inserted between ground line and SRAM cell) which reduces the sleep leakage power consumption 10… CONTINUE READING

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