A novel current-mode sensing scheme for magnetic tunnel junction MRAM

@article{Au2004ANC,
  title={A novel current-mode sensing scheme for magnetic tunnel junction MRAM},
  author={E.K.S. Au and Wing-Hung Ki and Wai Ho Mow and S. T. Hung and C. Wong},
  journal={IEEE Transactions on Magnetics},
  year={2004},
  volume={40},
  pages={483-488}
}
In this paper, we present two integrated circuits for sensing data nondestructively from one-transistor one-magnetic tunnel junction (1T-1MTJ) magnetoresistive random access memory (MRAM). The first one is a low-power sensing circuit for MTJs with a magnetoresistance (MR) ratio larger than 10%, and the second one is a high-sensitivity switched-current sensing circuit for MTJs with an MR ratio as low as 5%. The circuits are designed using 0.60- and 0.18-/spl mu/m CMOS processes, and their… CONTINUE READING
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