A novel cell technology using N-doped GeSbTe films for phase change RAM

@article{Horii2003ANC,
  title={A novel cell technology using N-doped GeSbTe films for phase change RAM},
  author={H. Horii and J. Yi and J. Park and Y. Ha and I. Baek and S. O. Park and Y. Hwang and S. Lee and Y. Kim and K. Lee and U. Chung and J. Moon},
  journal={2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)},
  year={2003},
  pages={177-178}
}
  • H. Horii, J. Yi, +9 authors J. Moon
  • Published 2003
  • Materials Science
  • 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen. 

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References

Investigation of crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films
The crystallization behavior of nitrogen-doped amorphous Ge2Sb2Te5-(N) phase-change thin films was studied by utilizing differential scanning calorimetry, in situ ellipsometry and in situExpand