A novel asymmetric graded low doped drain (AGLDD) vertical channel nMOSFET with sidewall masked (SWAM) LOCOS isolation

@article{Zhou2004ANA,
  title={A novel asymmetric graded low doped drain (AGLDD) vertical channel nMOSFET with sidewall masked (SWAM) LOCOS isolation},
  author={FaLong Zhou and R. C. Huang and Xing Zhang and Yangyuan Wang},
  journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.},
  year={2004},
  volume={1},
  pages={113-116 vol.1}
}
Vertical channel nMOSFET with asymmetric graded low doped drain (AGLDD) structure and sidewall masked (SWAM) LOCOS isolation process is first investigated and experimentally demonstrated. The AGLDD structure, which is formed by conventional ion implantation and impurity diffusion, is adopted to suppress short channel effects and hot carrier effect. The SWAM… CONTINUE READING