A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.

@article{Tian2017ANA,
  title={A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.},
  author={He Tian and Wentian Mi and Haiming Zhao and Mohammad Ali Mohammad and Yi Yang and Po-Wen Chiu and Tian-ling Ren},
  journal={Nanoscale},
  year={2017},
  volume={9 27},
  pages={
          9275-9283
        }
}
Resistive Random Access Memory (RRAM) shows great potential to be used as an artificial synapse for neuromorphic applications. The resistance can be gradually reduced during reset, which can enable enough states to mimic the "forgetting" process. However, the abrupt set (Mode I) cannot generate enough states to mimic the "learning" process, which results in… CONTINUE READING