A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications

This paper describes a lateral bipolar transistor build on SOI substrate (ie. SOI-LBJT) for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. This concept is validated by fabricated SOI-LBJT, which… CONTINUE READING