A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect

@article{Lu2012ANL,
  title={A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect},
  author={C. W. Lu and T. J. Tsai and Y. S. Chang and C. H. Tsai and Satnam Singh and Tze-Chiang Huang and Hansong Yao and C. J. Lee and T. I. Bao and S. L. Shue and C. H. Yu},
  journal={2012 IEEE International Interconnect Technology Conference},
  year={2012},
  pages={1-3}
}
This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% for EUV PR. Furthermore, the influence of LWR on reliability was evaluated on 45nm line-width test vehicle. A… CONTINUE READING