A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications

@article{Wang2010ANC,
  title={A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications},
  author={Mao Wang and Wenjin Luo and Yunfei Wang and L. M. Yang and Wenting Zhu and Peng Zhou and Jiong Yang and Xin-gao Gong and Y. Y. Lin and Ryan Huang and S. Song and Q. T. Zhou and Hanming Wu and Jingang Wu and M. H. Chi},
  journal={2010 Symposium on VLSI Technology},
  year={2010},
  pages={89-90}
}
A new Cu<inf>x</inf>Si<inf>y</inf>O resistive memory, which is different from Cu-doped SiO<inf>2</inf> or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125 °C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The activation energy of Cu vacancy migration in Cu<inf>x</inf>Si… CONTINUE READING
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