A novel 600V-LDMOS with HV-interconnection for HVIC on thick SOI

@article{Yamaji2010AN6,
  title={A novel 600V-LDMOS with HV-interconnection for HVIC on thick SOI},
  author={Masaharu Yamaji and Keisei Abe and Takeshi Maiguma and Hidenon Takahashi and Hitoshi Sumida},
  journal={2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2010},
  pages={101-104}
}
A novel LDMOS structure with the HV-interconnection for a 600V-HVIC on thick SOI is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600V. From the proposed structure the… CONTINUE READING

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