A novel 4H-SiC pinched barrier rectifier

@article{Ren2017AN4,
  title={A novel 4H-SiC pinched barrier rectifier},
  author={Na Ren and Kang L. Wang and Zheng Zuo and Ruigang Li and Kuang Sheng},
  journal={2017 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2017},
  pages={1950-1957}
}
In this paper, design, fabrication and experimental analysis of a novel 4H-SiC pinched barrier rectifier (PBR) are presented. The operation mechanism of the pinched barrier is analyzed by numerical simulation and energy band diagrams. PN junction depth (Xj) and spacing (S) parameters in the diode structure are carefully designed to achieve a prototype… CONTINUE READING