A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)

@article{Liu2002AN3,
  title={A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)},
  author={Hai-chuan Liu and M. Jagadesh Kumar and J. Rituerto Sin},
  journal={IEEE Electron Device Letters},
  year={2002},
  volume={23},
  pages={151-153}
}
In this paper, a novel three-dimensional (3-D) BiCMOS technology is proposed and demonstrated. In this technology, the NMOS transistor is fabricated on the bulk substrate (bottom layer) and the PMOS transistor is fabricated on the single-crystal top layer obtained using the selective epitaxy growth (SEG) and lateral solid phase epitaxy (LSPE). In addition… CONTINUE READING