## High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

- T. Krishnamohan, Donghyun Kim, Chi Dong Nguyen, C. Jungemann, Y. Nishi, K.C. Saraswat
- IEEE Transactions on Electron Devices
- 2006

@article{Krishnamohan2003ANV, title={A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET}, author={Tejas Krishnamohan and Christoph Jungemann and K. C. Saraswat}, journal={IEEE International Electron Devices Meeting 2003}, year={2003}, pages={29.3.1-29.3.4} }

- Published 2003 in IEEE International Electron Devices Meeting 2003

A novel, high performance sub-20 nm DMDG Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET is proposed. Full-band Monte Carlo and 1D Poisson-Schrodinger simulations show a 43% increase in I/sub on/ and /spl sim/2/spl times/ increase in switching speeds at 35% lower power dissipation compared to conventional Si DGFETs. The cut-off frequencies are in excess of… CONTINUE READING

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