A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

@article{Alam2021ANC,
  title={A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect},
  author={Shamiul Alam and Md. Shafayat Hossain and Ahmedullah Aziz},
  journal={Scientific Reports},
  year={2021},
  volume={11}
}
The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipation-less and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists… 

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