A new two-dimensional analytical model for the fully-depleted SOI four-gate transistor

@article{Chiang2010ANT,
  title={A new two-dimensional analytical model for the fully-depleted SOI four-gate transistor},
  author={T. K. Chiang},
  journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology},
  year={2010},
  pages={831-835}
}
  • T. K. Chiang
  • Published 2010 in
    2010 10th IEEE International Conference on Solid…
Based on the exact solution of the Poisson's equation, a new two-dimensional (2-D) model for the silicon-on-insulator (SOI) fully-depleted four-gate transistor(G4-FET) is successfully developed. The model is verified by its good agreement with the numerical simulation of the device simulator. For the threshold voltage degradation, it is found that the lateral coupling effects between lateral gate and front gate and negative vertical coupling effects between back gate and front gate will pull up… CONTINUE READING