A new technique to quantify deuterium passivation of interface traps in MOS devices

@article{Cheng2001ANT,
  title={A new technique to quantify deuterium passivation of interface traps in MOS devices},
  author={K. Cheng and Karl Hess and J M Lyding},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={203-205}
}
The ubiquitous presence of hydrogen in the fabrication of complementary metal oxide semiconductor (CMOS) devices results in the passivation of most interface traps by hydrogen. In this letter, we show that this hydrogen cannot be completely replaced by deuterium through a one-step deuterium anneal process. Improved device reliability attributed to deuterium… CONTINUE READING