A new technique to measure the thermal resistance of LDMOS transistors

  title={A new technique to measure the thermal resistance of LDMOS transistors},
  author={Roberto Menozzi and A. C. Kingswood},
  journal={IEEE Transactions on Device and Materials Reliability},
This paper introduces a new dc technique for the extraction of the thermal resistance of LDMOS transistors. The new extraction method has distinctive advantages over existing techniques: 1) it is based on dc measurements of the I-V output curves at different ambient temperatures, thus requiring only very standard and inexpensive equipment, with the exception of a stable and accurate temperature control; 2) it does not need any special layout or test structure, nor any knowledge of the physical… CONTINUE READING

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