A new strained-SOI/GOI dual CMOS technology based on local condensation technique

@article{Tezuka2005ANS,
  title={A new strained-SOI/GOI dual CMOS technology based on local condensation technique},
  author={Tsutomu Tezuka and Shu Nakaharai and Yukari Moriyama and N. Hirashita and Eri Toyoda and Naoyuki Sugiyama and T. Mizuno and Shin-ichi Takagi},
  journal={Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.},
  year={2005},
  pages={80-81}
}
Strained Si-on-insulator NMOSFETs and strained SiGe-on-insulator PMOSFETs were integrated, for the first time, using the local condensation technique. Both P- and NMOSFETs exhibited significant mobility and current drive enhancements. Furthermore, ultrathin-body SOI NMOSFETs and strained Ge-on-Insulator PMOSFETs were also integrated. Over 4 times higher hole-mobility enhancement was achieved in the GOI-PMOSFET, resulting in a comparable current drive with the NMOSFET. 

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