A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET

@article{Chiang2017ANS,
  title={A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET},
  author={Te-Kuang Chiang and Ying-Wen Ko and Hong-Wun Gao and Yeong-Her Wang},
  journal={2017 IEEE 12th International Conference on ASIC (ASICON)},
  year={2017},
  pages={520-524}
}
On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold… CONTINUE READING