A new method to evaluate effectiveness of CDM ESD protection

@article{Zhou2010ANM,
  title={A new method to evaluate effectiveness of CDM ESD protection},
  author={Yuanzhong Zhou and Jean-Jacques Hajjar and D F Ellis and Andrew H. Olney and J. J. Liou},
  journal={Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010},
  year={2010},
  pages={1-8}
}
A new methodology for evaluating the effectiveness of CDM protection is presented. VFTLP measurements are performed on structures composed of an ESD protection device in parallel with a gate monitor device; a MOS transistor or inverter. Parametric shifts in threshold voltage, VTH, as well as drain saturation current, IDD, of the MOS monitor device are measured to continuously gauge the extent of the damage resulted from a CDM-like fast transient.