A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore

@inproceedings{Tomczak2017ANM,
  title={A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore},
  author={Adam P Tomczak and Jorge Fern{\'a}ndez-Trillo and Shashank Bharill and Ferenc Papp and Gyorgy Panyi and Walter Stuehmer and Ehud Y Isacoff and Luis A Pardo},
  booktitle={The Journal of general physiology},
  year={2017}
}
Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4-S5 linker). However, our recent work on channels disrupted in the S4-S5 linker has challenged this interpretation for the KCNH family. Furthermore, a recent single-particle cryo-electron microscopy structure of KV10.1 revealed that the S4-S5… CONTINUE READING
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