A new low-parasitic polysilicon SCR ESD protection structure for RF ICs

@article{Xie2005ANL,
  title={A new low-parasitic polysilicon SCR ESD protection structure for RF ICs},
  author={Haolu Xie and Haigang Feng and Rouying Zhan and A. Wang and Daniel Rodriguez and Dave Rice},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={121-123}
}
Robust low-parasitic electrostatic discharge (ESD) protection is highly desirable for RF ICs. This letter reports design of a new low-parasitic polysilicon silicon controlled rectifier (SCR) ESD protection structure designed and implemented in a commercial 0.35-/spl mu/m SiGe BiCMOS technology. The concept was verified by simulation and experiment with the results showing that the new structure has much lower parasitic capacitance (C/sub ESD/) and higher F-factor than that of other ESD… CONTINUE READING