A new lateral trench IGBT with p+ diverter having superior electrical characteristics

@article{Kang2001ANL,
  title={A new lateral trench IGBT with p+ diverter having superior electrical characteristics},
  author={Ey Goo Kang and Seung Hyun Moon and Man Young Sung},
  journal={2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547)},
  year={2001},
  volume={2},
  pages={565-568 vol.2}
}
A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between the anode electrode region and cathode electrode. Generally, if the LTIGBT had a p+ divert region, the forward blocking voltage greatly decreased because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p… CONTINUE READING

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