A new insight into BEOL TDDB lifetime model for advanced technology scaling

@article{Chang2015ANI,
  title={A new insight into BEOL TDDB lifetime model for advanced technology scaling},
  author={Mi-Chang Chang and Y.-H. Lee and S. Y. Lee and Kamal Kant Joshi and C. C. Ko and C. C. Chiu and K. D. Wu},
  journal={2015 IEEE International Electron Devices Meeting (IEDM)},
  year={2015},
  pages={7.4.1-7.4.4}
}
For the past several years, there have been debates that backend IMD-TDDB Sqrt(E) lifetime model is too conservative and has become the constraint for BEOL technology scaling. In this study, it is demonstrated that low bias TDDB model could be varied from conservative E to aggressive Power-Law or 1/E model, depending on the material characteristics of extreme low-k (ELK), etch stop layer (ESL), and the process conditions. Based on J-V, I-t and defect generation rate analysis, Sqrt(E) model is… CONTINUE READING