A new flash E2PROM cell using triple polysilicon technology

  title={A new flash E2PROM cell using triple polysilicon technology},
  author={F. Masuoka and M. Asano and H. Iwahashi and T. Komuro and S. Tanaka},
  journal={1984 International Electron Devices Meeting},
  • F. Masuoka, M. Asano, +2 authors S. Tanaka
  • Published 1984
  • Computer Science, Materials Science
  • 1984 International Electron Devices Meeting
  • A new Flash Electrically Erasable-PROM cell with single transistor per bit as same as conventional UV-EPROM(1) (2) and suitable for 256K bit F-E2PROM with rather conservative 2.0µm design rule is described. [...] Key Result Good erasing characteristics is obtained with 550Å of oxide thickness between floating gate and erase gate.Expand Abstract
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    • F. Masuoka
    • Physics
    • 1981 International Electron Devices Meeting
    • 1981
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