A new flash E2PROM cell using triple polysilicon technology
@article{Masuoka1984ANF,
title={A new flash E2PROM cell using triple polysilicon technology},
author={F. Masuoka and M. Asano and H. Iwahashi and T. Komuro and S. Tanaka},
journal={1984 International Electron Devices Meeting},
year={1984},
pages={464-467}
}A new Flash Electrically Erasable-PROM cell with single transistor per bit as same as conventional UV-EPROM(1) (2) and suitable for 256K bit F-E2PROM with rather conservative 2.0µm design rule is described. [...] Key Result Good erasing characteristics is obtained with 550Å of oxide thickness between floating gate and erase gate.Expand Abstract
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