A new bipolar transistor—GAT

@article{Kondo1980ANB,
  title={A new bipolar transistor—GAT},
  author={Harufusa Kondo and Y. Yukimoto},
  journal={IEEE Transactions on Electron Devices},
  year={1980},
  volume={27},
  pages={373-379}
}
A new bipolar transistor named Gate Associated Transistor (GAT) was proposed and the operating mechanisms were verified. The structure of the GAT has a unique base region consisting of an FET merged into the base of a standard bipolar transistor. The operating mechanisms and characteristics of the GAT were investigated and compared with those of standard power transistors. The most outstanding feature of the GAT was a large area for safe operation.