A new approach to convex corner compensation for anisotropic etching of (100) Si in KOH

@inproceedings{Zhang1996ANA,
  title={A new approach to convex corner compensation for anisotropic etching of (100) Si in KOH},
  author={Qingxin Zhang and Litian Liu and Zhongquan Li},
  year={1996}
}
Abstract The method of convex corner compensation with a 〈100〉 bar for (100) silicon rectangular etching proposed by Mayer et al. ( J. Electrochem. Soc., 137 (1990) 3947–3951) has been investigated. Limitations of the method are discussed, and a modified method is put forward. Both the theoretical analysis and the experimental result are given in this paper. 

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