A new a-Si TFT with SiO2/SiN/sub x/ gate insulator for 10.4-inch LCDs

Abstract

A novel a-Si TFT (thin-film transistor) with a composite gate insulator of CVD (chemical-vapor-deposited) SiO/sub 2//PE-CVD (plasma-enhanced CVD) SiN/sub x/ has been developed. This TFT has been applied to 10.4-in-diagonal LCDs (liquid crystal displays). Because of the high quality of CVD SiO/sub 2/, Vth drift, which was often observed after prolonged… (More)

Topics

Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.

Slides referencing similar topics