A new SRAM cell design using CNTFETs

  title={A new SRAM cell design using CNTFETs},
  author={Sheng Ta Lin and Yong-Bin Kim and Fabrizio Lombardi and Young Jun Lee},
  journal={2008 International SoC Design Conference},
As CMOS devices scales to the nano ranges, increased short channel effects and process variations considerably affect device and circuit designs. Novel devices are been proposed to address these problems. As a promising new transistor, the carbon nanotube field effect transistor (CNTFET) avoids most of the fundamental limitations of the traditional CMOS devices. In this paper, the MOSFET-like CNTFET is reviewed and shown as a promising device for high-performance and low-power memory designs. A… CONTINUE READING
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