A new Method for Dynamic Ron Extraction of GaN Power HEMTs

@inproceedings{Badawi2015ANM,
  title={A new Method for Dynamic Ron Extraction of GaN Power HEMTs},
  author={Nasser Badawi and Sibylle Dieckerhoff},
  year={2015}
}
Degradation of the dynamic on-state resistance RON of GaN High-Electron-Mobility Transistors (HEMTs) is commonly observed under switching conditions with high drain current, high blocking voltage and high switching frequency. In order to determine this on-state resistance, specific measurement methods need to be developed. Since the drain source voltage of the device changes between hundreds of volts in the off-state and a few mill-volts in the on-state, an accurate determination of the on… CONTINUE READING

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