A multiple-terminal gate charging model

  title={A multiple-terminal gate charging model},
  author={W. Lin},
  journal={IEEE Electron Device Letters},
  • W. Lin
  • Published 2003 in IEEE Electron Device Letters
A gate charging model considering charging effect at all terminals of a MOSFET is reported in this letter. The model indicates two distinct charging mechanisms existing in P MOSFETs with a protecting device at their gates during plasma processing. The "normal-mode" charging mechanism exists when antenna size at the gate is higher than that at other terminals combined. In contrast, the "reverse-mode" charging mechanism exists in the case of antenna size at the gate lower than that at other… CONTINUE READING


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