A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions

@article{Ishigaki2010AMS,
  title={A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions},
  author={Takashi Ishigaki and Takayuki Kawahara and Riichiro Takemura and Kazuo Ono and Keisuke Ito and Hisayoshi Matsuoka and Hideo Ohno},
  journal={2010 Symposium on VLSI Technology},
  year={2010},
  pages={47-48}
}
We first report a multi-level-cell (MLC) spin-transfer torque memory (SPRAM) with series-connected magnetotunnel junctions (MTJs). The series MTJs (with different areas) show multi-level resistances by a combination of their magnetization directions. A four-level operation by spin-transfer-torque writing was experimentally demonstrated. A scheme for the write/read operation of the MLC SPRAM was also presented. 
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Proposed concept of MLC SPRAM with series MTJs

  • K. Miura
  • VLSI Tech. Dig.,
  • 2007
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