A monolithic X-band class-E power amplifier

  title={A monolithic X-band class-E power amplifier},
  author={R. Tayrani},
  journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)},
  • R. Tayrani
  • Published 2001 in
    GaAs IC Symposium. IEEE Gallium Arsenide…
This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.