A monolithic 2.45GHz power amplifier in SiGe–bipolar with 0.4W output power and 53% PAE at 2V

Abstract

A monolithic radio frequency power amplifier for 1.9- 2.6 GHz has been realized in a 0.25 µm SiGe-bipolar technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching and is operating down to supply voltages as low as 1 V. A microstrip line balun acts as output matching network. At 1 V… (More)

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