A monolithic 1 x 10 array of InGaAsP/InP photodiodes with small dark current and uniform responsivities

Abstract

We fabricated a monolithic 1 × 10 array of InGaAsP/InP double-heterostructure photodiodes by liquid-phase epitaxy, which has highly uniform characteristics in breakdown voltages and responsivities and whose deviations in an array are ±1 percent and ±6 percent, respectively. The dark current of the elemental photodiode at low bias voltage… (More)

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