A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

@inproceedings{Kunikiyo1996AMO,
  title={A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation},
  author={Tatsuya Kunikiyo and Masahiro Takenaka and Masato Morifuji and Kenji Taniguchi and C. Hamaguchi},
  year={1996}
}
The rate of impact ionization due to the primary hole in silicon is numerically derived from pseudo‐wave‐functions and realistic energy band structure based on a nonlocal empirical pseudopotential method including the spin‐orbit interaction. The calculated impact‐ionization rate SII [s−1] is well fitted to an analytical formula with a power exponent of 3.4, indicating a soft threshold of the impact ionization rate: SII [s−1]=1.14×1012 [s−1 eV−3.4]×(e [eV]−1. 49 [eV])3.4, where e [eV] is the… CONTINUE READING

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Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation

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