A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

@inproceedings{Nogales2005AMS,
  title={A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN},
  author={Emilio Nogales and Kenneth Lorenz and Kedian Wang and Iman S Roqan and Robert W Martin and Katherine O'Donnell and E. Alves and Sandra Ruffenach and Olivier Briot},
  year={2005}
}
Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a… CONTINUE READING

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