A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

@article{Rengel2006AMI,
  title={A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs},
  author={Raul Rengel and M. J. Martin and Tom{\'a}s Gonz{\'a}lez and Javier Mateos and Daniel Pardo and Gilles Dambrine and J. P. Raskin and Francois Danneville},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={523-532}
}
In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator MOSFETs is carried out. Special care is given to reproduce the main topology parameters, together with the most relevant parasitic elements of real devices in order to accomplish an… CONTINUE READING