A micromachining post-process module for RF silicon technology

@article{Pham2000AMP,
  title={A micromachining post-process module for RF silicon technology},
  author={Nga P. Pham and K. T. Ng and Marian Bartek and Pasqualina M. Sarro and Behzad Rejaei and Joachim N. Burghartz},
  journal={International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)},
  year={2000},
  pages={481-484}
}
A bulk-micromachining post-process module, based on two-level structuring of RF silicon substrates and a 4-/spl mu/m thick one-level sub-surface metal pattern, is presented. This allows for fabricating three-dimensional structures for novel RF components and has potential in more compact integration. Next to a concise description of the relevant aspects of the fabrication process, mechanical stability of the postprocessed wafers is analyzed. Sub-surface spiral inductors with good quality and… CONTINUE READING

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