A method to overcome self-heating effects in SOI MOSFETs

@article{Cole2003AMT,
  title={A method to overcome self-heating effects in SOI MOSFETs},
  author={Bruce Cole and Stephen Parke},
  journal={Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)},
  year={2003},
  pages={295-297}
}
Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, self-heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity, the negative effects of self-heating can be reduced.