• Materials Science
  • Published 2010

A method for forming a conformal oxide layer on the semiconductor device

@inproceedings{S2010AMF,
  title={A method for forming a conformal oxide layer on the semiconductor device},
  author={克里斯托弗·S·奥尔森 and 横田义孝 and 约翰内斯·F·斯温伯格 and 阿古斯·S·查德拉},
  year={2010}
}
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100 DEG C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.